Besides, the shift of theμFE is determined by the threshold voltage degradation. In dynamic gate pulse stress, while the pulse is applied to gate electrode.
在栅极施加电压脉冲应力条件下,实验分别考虑脉冲上升沿、下降沿、脉冲个数(周期)和基准电压对退化的影响,器件的转移曲线显示亚阈值区没有变化,呈现出热载流子退化的典型特征。
参考来源 - N型金属诱导横向结晶TFT交直流应力下的器件退化研究·2,447,543篇论文数据,部分数据来源于NoteExpress
The gate electrode is formed on the gate insulating film and has a sidewall.
栅极电极在栅极绝缘膜上形成,并具有侧壁。
So the name of a process became identified with the width of the gate electrode.
所以,制程的名字就用来标识闸电极的宽度。
A source region and a drain region are formed in the fin at the opposite sides of the gate electrode.
源区和漏区形成在鳍部内栅极的相对侧处。
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